Abstract
The paper reports a new power Schottky diode (PSD) structure, with a double epitaxial layer and oxide ramp edge. This structure was designed to enhance the forward current capability and the resilience to reverse current transient pulses of the PSD with only minor decreases in the maximum working reverse voltage capability ( V RWM). Two different metallization types for the Schottky contact were investigated, namely: Ti:Al for devices intended for operation with T jmax = 150°C and Cr:Ni:Ag for diodes with T jmax = 125°C, respectively.
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