Abstract
In this paper, we propose a double aperture double-gate AlGaN/GaN vertical high-electron-mobility transistor (HEMT) to improve the device characteristics, such as the current and the ON resistance ($$\hbox {\textit{R}}_{\mathrm{ON}}$$RON). The proposed vertical HEMT results are compared to the conventional single aperture single-gate vertical HEMT of equal dimensions, and increased drain current and lower $$\hbox {\textit{R}}_{\mathrm{ON}}$$RON are shown. A comprehensive simulation study has also been carried out for the proposed device, to analyse the impact of thickness and doping concentration of aperture, drift region, and current blocking layer. In addition, the effect of different materials in current blocking layer on device characteristics is also studied. The obtained results and their effect on device characteristics have been thoroughly analysed and explained accordingly.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
