Double AlGaN/InGaN superlattice electron-blocking layer improved performance of InGaN/GaN light-emitting diodes

Abstract

The InGaN-based blue light-emitting diodes (LEDs) with double AlGaN/InGaN superlattice (SL) electron-blocking layers are investigated theoretically. The simulation results indicate that the output power, the radiative recombination rates, and the spontaneous emission rates of the blue LED with double AlGaN/InGaN superlattice layers are evidently improved, meanwhile, the efficiency droop phenomenon is remarkably alleviated, compared with the original structure. The reasons are that the new structure with double AlGaN/InGaN SLs can not only suppress the electron leakage but also enhance the hole injection. Specifically, it can improve the radiative recombination rates, which leads to higher output power than original structure.