Abstract
Ionization energy levels introduced in Te-doped GaAs after conversion to p type by diffusion of 64Cu have been measured by means of Hall effect. Levels at 0.145, 0.166, 0.20, and 0.44 eV are observed after various sequential heat treatments. The 0.145 and 0.44 eV levels are attributed to the two acceptor levels expected of Cu on a Ga site. The 0.20 eV level is assumed to arise from a Ga vacancy as previously reported, and the 0.166 eV level is interpreted as an ion pair between Cu on a Ga site and Te on an As site.
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