Abstract
The energy dependent dose response curves obtained for a small size planar silicon diode are calculated using a classical Monte Carlo method which enables an individual treatment of each outgoing pulse. These response curves are given in both irradiation (air and water) but mainly deep tissue-equivalent dose units, they allow discussion of the sensitivity of the detector as well as the limits of the energy band in which the detector response is of a sufficient accuracy to fulfil international requirements. All the calculations are done here for individual or associated 7.5 mm 2 silicon sensors, bare or mounted behind shielding material (filters or electron radiators) and for various electronic conditions: pulse height cut-off, integration time, free carrier lifetime
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