Dose dependence of nano-hardness of 6H-SiC crystal under irradiation with inert gas ions

Abstract

Abstract Single crystal 6H-SiC was irradiated by inert gas ions (He, Ne, Kr and Xe ions) to various damage levels at room temperature. Nano-indentation test was performed to investigate the hardness change behavior with damage. The depth profile of nano-hardness for 6H-SiC decreased with increasing depth for both the pristine and irradiated samples, which was known as indentation size effect (ISE). Nix-Gao model was proposed to determine an asymptotic value of nano-hardness by taking account of ISE for both the pristine and irradiated samples. In this study, nano-hardness of the irradiated samples showed a strong dependence on damage level and showed a weak dependence on ions species. From the dependence of hardness on damage, it was found that the change of hardness demonstrated three distinguishable stages with damage: (I) The hardness increased with damage from 0 to 0.2 dpa and achieved a maximum of hardening fraction ∼20% at 0.2 dpa. The increase of hardness in this damage range was contributed to defects produced by ion irradiation, which can be described well by Taylor relation. (II) The hardness reduced rapidly with large decrement in the damage range from 0.2 to 0.5 dpa, which was considered to be from the covalent bond breaking. (III) The hardness reduced with small decrement in the damage range from 0.5 to 2.2 dpa, which was induced by extension of the amorphous layer around damage peak.