Abstract
The electrical and optical properties of Zn-doped InAlGaAs layers grown by low-pressure metal-organic vapor-phase epitaxy are studied with different Al contents. Hole concentration of InAlGaAs decreases with increasing Al content, which is due to the relationship between the Al content and the Zn acceptor binding energy derived from the low-temperature 2K photoluminescence spectra. The deterioration of Zn-doped InAlAs layers is observed in layers grown with a lower V/III gas-phase ratio, which is the result of an oxygen-related deep level.
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