Abstract
In the present work we have tested the effects of graphene doping by nitrate ions and chlorine anions on graphene/n-silicon Schottky barrier solar cells, by the exposure to nitric acid and thionyl chloride vapors. In both cases the graphene doping process had beneficial effects on the power conversion efficiency (PCE) and thionyl chloride doping showed a better improvement than the one obtained with nitric acid. A solar cell with an initial PCE of 1.99% could be increased to 4.02% by nitric acid doping treatment while a solar cell with an initial PCE of 1.49% could be increased to 4.32% by thionyl chloride doping treatment.
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