Abstract
The doping characteristics of S in the metalorganic vapor-phase epitaxial growth of InP and GaInAs are studied using three different but consistent methods of determining the doping level in the crystal, Hall effect, electrochemical C-V profiling and by C-V bias over distances of ∼0.5 μm. It is shown that under the same growth conditions the doping level in InP is 3.5 times larger than in GaInAs and increases 100-fold when the growth temperature is decreased from 625 to 525 °C. S is shown to be a useful donor, essentially completely ionized at room temperature, easily incorporated at levels ≲1018 cm−3 into metalorganic vapor-phase epitaxy growth at 625 °C where crystal morphology is optimized and at high levels ∼1020 cm−3 to form low-impedance n-contact layers with growth at 525 °C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
