Abstract
The doping of Zn (p-type) in GaAs and Al x Ga 1− x As ( x≈0.34−0.38) and that of Se (n-type) in Al x Ga 1− x As ( x≈0.30−0.35) grown by the metal organic chemical vapor deposition method is studied. Calibration curves between the carrier concentration and the half-width of the room-temperature emission band are obtained in order to be able to use them for quick estimates of the conductivity in the ternary cladding layers of double hetero-laser structures. It is also found that at the growth temperature used, viz., 720°C, Se incorporation in Al x Ga 1− x As ( x≈ 0.30−0.35) at low H 2Se levels does not yield the expected conductivity in the solid, perhaps due to the compensation of the Se donors by unknown impurities introduced from the gas ambient.
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