Doping-induced spin Hall ratio enhancement in A15-phase, Ta-doped β-W thin films

Abstract

As spintronic devices become more and more prevalent, the desire to find Pt-free materials with large spin Hall effects is increasing. Previously it was shown that β-W, the metastable A15 structured variant of pure W, has charge-spin conversion efficiencies on par with Pt, and it was predicted that β-W/Ta alloys should be even more efficient. Here we demonstrate the enhancement of the spin Hall ratio (SHR) in A15-phase β-W films doped with Ta (W4−xTax where x = 0.34 ± 0.06) deposited at room temperature using DC magnetron co-sputtering. In close agreement with theoretical predictions, we find that the SHR of the doped films was ∼9% larger than pure β-W films. We also found that the SHR’s in devices with Co2Fe6B2 were nearly twice as large as the SHR’s in devices with Co4Fe4B2. This work shows that by optimizing deposition parameters and substrates, the fabrication of the optimum W3Ta alloy should be feasible, opening the door to commercially viable, Pt-free, spintronic devices.