Abstract
Doping in the mixed layer was introduced to fabricate high brightnessand high efficiency organic light emitting devices. In these devices, a copperphthalocyanine (CuPc) film acts as the buffer layer,a naphthylphenybiphenyl amine (NPB) film as the hole transport layerand a tris(8-hydroxyquinolinolate)aluminium (Alq3) film as theelectron transport layer. The luminescent layer consists of the mixtureof NPB, Alq3 (to be called the mixed layer), and an emittingdopant 5,6,11,12-petraphenylnaphthacene (rubrene), where theconcentration of NPB declined and the concentration of Alq3 wasincreased gradually in the deposition process. Adopting this dopingmixed layer, the device exhibits the maximum emission of49300 cd/m2 at 35 V and the maximum efficiency of 7.96 cd/A at10.5 V, which have been improved by two times in comparisonwith conventional doped devices. We attribute this improvement tothe effective confinement of carriers in the mixed layer, which leadsto the increase of the recombination efficiency of carriers.
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