Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals

Abstract

Results of gallium nitride crystallization on native seeds by Hydride Vapor Phase Epitaxy method are described. The seeds are high quality ammonothermal GaN crystals. Properties of unintentionally doped HVPE-GaN are briefly presented. A review on doping with donors and acceptors is prepared. Intentional incorporation of silicon or germanium is proposed in order to grow highly conductive HVPE-GaN. Carbon, iron, or manganese was introduced to increase the resistivity of crystallized material. GaN samples with different dopants are described in terms of their structural, optical, and electrical properties.