Year-end Sale % OFF 
Abstract
The activation energy of acceptors in ZnSe is about 110 meV and the ratio of the activated free holes to the doped acceptors is reduced for high doping. This paper proposes doping of acceptors in a superlattice structure to improve the activation ratio. The doping characteristics were analyzed considering self-consistent potential change due to the carrier distributions. The activation ratio is shown to be improved for the shorter period of the superlattice and free-hole concentrations of nearly 1×1019 cm−3 are expected in a ZnSe/ZnS0.18Se0.82 superlattice with a 60 Å period, which is about a 4–5 times improvement compared with the doping in ZnSe films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
