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Abstract
Epitaxial layers of p-type In x Ga 1- x As y P 1- y doped with Mn were grown by liquid-phase epitaxy on (111)-B oriented InP substrates at a growth temperature of 635°C. The doping characteristics and electrical and luminescent properties were studied and compared with those in Zn-doped epilayers. The distribution coefficient of Mn was about 0.1–0.3. The p-type epilayers with hole concentration of up to 3 × 10 18 cm −3 could be easily obtained by Mn doping. The activation energy of the Mn acceptor was about 40 meV. Mn doping yielded a broad photoluminescent emission spectrum which probably arises from d-shell interaction of the Mn as well as strong phonon coupling. From electron beam-induced current measurements in p- n heterojunctions utilizing Mn, a value of L n = 2 μm was obtained for the minority carrier diffusion length of electrons in the p-type region.
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