Abstract
In this paper we present a detailed simulation analysis of the impact of the substrate doping profile on Random Telegraph Noise (RTN) instabilities in deca-nanometer Floating Gate Flash memories. Following a Monte Carlo procedure, the statistical distribution of the RTN fluctuation amplitude has been computed running a large number of 3D device simulations, with random placement of discrete dopant atoms in the substrate and a discrete single trap at the Oxide/Substrate interface. To explore the effect of the doping profile on RTN instabilities, both retrograde and δ -shape dopings have been investigated, considering their optimal parameters for RTN suppression. This analysis allows to clarify several key issues relating the substrate doping profile and the RTN distribution amplitude. Results are of utmost importance for the assessment of design guidelines for technology optimization against RTN instabilities.
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