Abstract
AbstractThe growth of Si‐doped 2H‐AlN thin films by plasma‐induced molecular‐beam epitaxy is reported. We have found that Si positively affects the epitaxy being an effective surfactant for AlN growth with a remarkable impact on the crystal quality. It was also observed that heavy doping conditions result in the volume segregation of Si at the threading dislocation network and in the formation of an amorphous (AlO)(SiO)N cap layer caused by post‐growth surface oxidation of the accumulated Al and segregated Si. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
