Abstract
The growth of Si-doped AlN(0001) thin films on Al2O3(0001) substrates by plasma-induced molecular-beam epitaxy is reported. We have found that Si positively affects the epitaxy being an effective surfactant for AlN growth with a remarkable impact on the crystal quality. It was proven that the characteristic surface reconstruction sequences frequently related to the Al adatoms are obviously Si induced on AlN(0001) surfaces. It was also observed that heavy doping conditions result in volume segregation of Si on the threading dislocation network and in the formation of an amorphous (AlO)(SiO)N cap layer caused by surface oxidation of the accumulated Al and segregated Si. The electron affinity was measured to be smaller than 0.5eV on the clean AlN surface after removing of the cap layer using Ar+ sputtering.
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