Abstract
Doping effects of group-III and -V element on the a-Si films prepared by “high” pressure rf sputtering were studied. Three different types of doping effects on conductivity were observed for different elements. One is the increase of conductivity due to the shift of the Fermi level, another is the increase of conductivity due to the increase of hopping sites contributing to variable range hopping conduction and the third is that doping is less effective on conductivity. Distinct adsorption effects on conductance were observed for the cases of B- or Al-doping. These phenomena indicate that the band-bending is caused in surface regions by adsorbates because of a relatively small density of localized gap states, so the formation of built-in potential due to Schottky barrier or p-n junction would be possible for those a-Si films prepared by “high” pressure rf sputtering.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
