Abstract
ABSTRACT SrBi4Ti4O15 (SBTi), SrBi4−x La x Ti4O15 (x = 0.10, 0.25: SBLT), and SrBi4−y/3Ti4−y V y O15 (y = 0.03: SBTV) thin films have been prepared by the sol-gel method. The ferroelectric properties of the SBTi thin films have been improved by La and V substitution. The SBLT-0.10 and SBTV-0.03 films exhibit large remnant polarization (2P r) of 45.9 μC/cm2 and 34.0 μC/cm2 respectively. V doping brings about the more significant improvement of the fatigue resistance of the SBTi. After being subject to 2.2 × 109 switching cycles at the low frequency of 50 kHz, the P nv of SBTV-0.03 change little.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
