Abstract
In this letter it is shown that both p- and n-type Ge vacuum-deposited films can be obtained on the same GaAs substrate during the same pump-down. p-type films are generally obtained if films are deposited immediately on the substrate at temperature ⩾300 °C, cooled down from outgas temperature 575 °C. n-type films are obtained consistently if the same substrate is then held below 300 °C for about 100 min before deposition. The low electron mobility observed for n-type Ge films leads to the conclusion that the properties of the films are determined by As compensation of p-type defects inherent in the films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
