Abstract
Subpicosecond luminescence and transmission spectroscopy for a broad range of doping and optical excitation densities are used for a systematic study of thermalization and energy relaxation of highly photoexcited electrons and holes in bulk intrinsic, n- and p-doped GaAs and InP at room temperature. The measurements are complemented by an ensemble-Monte-Carlo analysis, including non-equilibrium phonons and plasmons as well as electron degeneracy.
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