Doping dependence of boron–hydrogen dynamics in crystalline silicon

Abstract

In this contribution, we investigate the formation and dissociation of boron–hydrogen (BH) pairs in crystalline silicon under thermal equilibrium conditions. Our samples span doping concentrations of nearly two orders of magnitude and are passivated with a layer stack consisting of thin aluminum oxide and hydrogen-rich silicon nitride (Al2O3/SiNx:H). This layer stack acts as a hydrogen source during a following rapid thermal annealing. We characterize the samples using low-temperature Fourier-transform infrared spectroscopy and four-point-probe resistivity measurements. Our findings show that the proportion of hydrogen atoms initially bound to boron (BH pairs) rises with increasing boron concentration. Upon isothermal dark annealing at (163 ± 2) °C, hydrogen present in molecular form, H2, dissociates at a rate directly proportional to the concentration of boron atoms, ∝ [B−], leading to the formation of BH pairs. With prolonged annealing, an unknown hydrogen complex is formed at a rate that is inversely proportional to the square of the boron concentration, ∝ 1/[B−]2, resulting in the disappearance of BH pairs. Based on experimental observations, we derive a kinetic model in which we describe the formation of the unknown complex through neutral hydrogen H0 binding to a sink. Additionally, we investigate the temperature dependence of the reaction rates and find that the H2 dissociation process has an activation energy of (1.11 ± 0.05) eV, which is in close agreement with theoretical predictions.