Abstract

One of the remaining keys to the success of polymer electronics is the ability to systematically pattern/stack polymer semiconductors with high precision. This paper reports the precise patterning and stacking of various polymer semiconductors with the assistance of a molecular oxidizing agent and reducing agent for donor and acceptor semiconductors, respectively. Such doping-induced solubility control methods have been previously well developed; however, practical applications to various optoelectronic devices have been limited. To pattern/stack various polymers in various dimensions, it is important to carefully design not only the doping method for desolubilizing polymer semiconductors but also the dedoping method for recovering the genuine characteristics of each polymer semiconductor. Based on a systematic approach for such a doping-dedoping interplay, various high-performance optoelectronic devices are demonstrated: (1) all-polymer complementary inverter pattern with a high gain of 176, (2) all-polymer planar heterojunction photodiode with green-selective nature and high specific detectivity over 1012 Jones, and (3) all-polymer ambipolar transistor pattern with balanced hole and electron mobilities. The results of the study indicate the potential of practical application of the doping-dedoping interplay to lateral/vertical patterning of different polymer semiconductors with high precision.

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