Abstract
Double-heterostructure light-emitting diodes (LEDs) consisting of an n-Ga0.51In0.49P emitter, a carbon-doped p-GaAs active layer, and a p-Al0.30Ga0.70As cladding layer have been grown by gas source molecular beam epitaxy with halomethane carbon doping sources. CCl4 and CHCl3 have been used to vary the active layer C doping level from 1018 to 1020 cm−3. Measurements of LED optical modulation bandwidth indicate that the bandwidth increases with C doping, attaining a record value of 1.6 GHz at 1020 cm−3 C concentration. The LED radiance is observed to decline significantly in the 1019–1020 cm−3 range.
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