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Abstract
Cw Ar + laser recrystallized SOI films were implanted with As ions at 100 keV with doses of 1 × 10 15−1 × 10 16 cm −2 and then rapid thermal annealed with a rf graphite heater. Surface loss of As can be prevented by using N 2 as protecting atmosphere. The diffusion behavior of dopants in SOI films has been investigated by RBS and SIMS in addition to spreading resistance measurements. For some annealing conditions double peaks have been observed in As atom concentration and carrier concentration profiles. It was supposed that the appearance of double peaks was caused by two different diffusion mechanisms — low diffusivity in the bulk of the grains and the higher diffusivity at grain boundaries.
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