Abstract
Atomic and carrier concentration profiles in poly-Si on insulator structures implanted with arsenic ions after furnace and rapid thermal annealing (RTA) have been investigated by Rutherford backscattering (RBS) and Hall effect measurements. Arsenic atoms at and near the implanted peak region show slow diffusion, while those at the tail region show fast diffusion. The diffusivity for As in poly-Si on insulator is represented by D = 8.4 × 10 4 exp(−3.8/ kT) cm 2/s for the tail region and D = 1.7 × 10 3 exp(−3.8/ kT) cm 2/s for the peak region. Poly-Si layers after implantation and annealing were found to have tensile stresses of 1.7–3.7 kbar.
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