Abstract
Dopant redistribution during gate oxidation is investigated, where the enhancement of the diffusion due to implantation damage and that due to oxidation occur simultaneously. Dopant profiles after the gate oxidation are measured for various oxidation times, and they are compared to the profiles after the N/sub 2/-annealings. From the results, it is concluded that, for typical gate oxidation conditions (oxide thickness less than 100 /spl Aring/), the enhancement due to oxidation is small, and the dopant redistribution is initially dominated by the damage-enhanced diffusion.
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