Dopant effects on the grain structure and electrical property of PZT thin films prepared by sol-gel process

Abstract

PZT ( Zr Ti = 53 47 ), PNZT (4% Nb doped PZT), PSZT (2% Sc doped PZT) and PSNZT (1% Sc and 1% Nb doped PZT) thin films were prepared by a sol-gel process. They were characterized by XRD, SEM, AFM and TEM. It was observed that the crystallographic orientation and the grain size of PZT film can be changed by doping. Pt/PZT/Pt capacitors were fabricated for the measurement of ferroelectric properties. By the doping of Sc and Nb together, the fatigue property of PZT was considerably improved and the coercive field was decreased, while the remanent polarization was not changed.