Abstract
Scanning Force Microscopy, a non-destructive technique, has been applied to p-n junctions to : (i) locate the metallurgical and the electrical junctions ; (ii) determine the z-component and gradient of the stray electric field ; (iii) measure the width of the depletion region on the n- and p-sides ; (iv) work out the dopant concentration in both n- and p-sides.
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