Abstract
Dopant activation and redistribution in 75As+‐implanted (100 keV, ) polysilicon films following rapid thermal processing (RTP) are reported. For the annealing conditions used (10–30s exposure to a 1150°C graphite heater), significant arsenic redistribution was observed, unlike the case of comparably implanted and annealed single‐crystal silicon. For uncapped films, surface loss of arsenic during RTP resulted in high sheet resistance; however, a thin oxide cap (600Å) prevented this arsenic loss. Sheet resistance comparable to furnace‐annealed samples (∼30 Ω/□ for dose films) could then be obtained in ∼15s. The shape of carrier concentration and total dopant depth profiles following RTP was found to be dependent on both implant dose and time of annealing. These results can be qualitatively understood using recently proposed models for arsenic diffusion in furnace‐annealed polysilicon films.
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