Donors in a strong magnetic field and elastic magnetic-impurity resonance in diamondlike semiconductors

Abstract

The possibility of resonance during elastic intravalley scattering in n-type semiconductors is investigated in connection with the crossing (due to anisotropy of the effective mass) of the energy levels of excited states of a shallow donor as functions of the magnetic field. The hybridization of states of different frequencies in the vicinity of a crossing is attributed to the emergence of a nonzero dipole moment of the excited impurity atom and, accordingly, a long-range potential, which creates carrier-transport anomalies. The lower part of the donor spectrum is calculated as a function of the magnetic field in Si with B∥〈001〉 and in Ge with B∥〈111〉 or B∥〈110〉. A crossing occurs in Ge in the field range 9.9 T<B<16.7 T and in Si in the field range 10.5 T<B<37.7 T. The characteristic longitudinal relaxation time and the transverse conductivity, which are determined by scattering at excited donors in the presence of the hybridization of states, are calculated.