Abstract
The scattering by an excited neutral donor in Ge and Si near an energy-level crossing (on account of anisotropy of the effective mass) of the electronic states of the impurity as a function of the magnetic field is investigated. The crossing of the 2s-and 2p-like levels leads to the appearance of a nonzero dipole moment of the impurity atom and, therefore, a long-range potential, which is responsible for characteristic features in carrier transport. The transverse impurity conductivity is calculated.
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