Donor Binding Energy in GaAs/Ga1−x AlxAs Quantum Well: the Laser Field and Temperature Effects

Abstract

Based on the effective-mass approximation theory and variational method, the laser field and temperature effects on the ground-state donor binding energy in the GaAs/Ga1−xAlxAs quantum well (QW) are investigated. Numerical results show that the donor binding energy depends on the impurity position, laser parameter, temperature, Al composition, and well width. The donor binding energy is decreased when the laser field and temperature are increased in the QW for any impurity position and QW parameter case. Moreover, the laser field has an obvious influence on the donor binding energy of impurity located at the vicinity of the QW center. In addition, our results also show that the donor binding energy decreases (or increases) as the well width (or Al composition x) increases in the QW.