Abstract
Neutral donor bound excitons (I2) and donor related electronic Raman scattering (ERS) in wurtzite GaN epilayers deposited onto Si, 6H-SiC, Al2O3 and GaN substrates are studied at low temperature by high-resolution selective photoluminescence spectroscopy (SPL). Due to the presence of a large strain distribution in the heterostructures, the observation of the I2 excited states under selective laser excitation is possible from tensile to compressive strain along the [0001] direction. It is shown that the I2 spectra strongly depend on which valence band (A or B) the bound exciton hole belongs to. Resonant ERS and resonantly excited two-electron spectra reveal that two main different residual donor species are present both in MBE and MOCVD epitaxial samples. The donor binding energies are shown to vary noticeably with the biaxial strain field.
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