Abstract
Ge x Si 1− x /Si(0 0 1) heterostructures with constant composition of Ge ( x=0.19–0.32) are grown by low-temperature (300–400 °C) molecular-beam epitaxy. Transmission electron microscopy reveals dislocation half-loops in the subsurface region of the stressed film, which is associated with nucleation of dislocations on elements of the three-dimensional relief on the surface of the growing or annealed film. Dislocation-nucleation centers are reproductive and form families of closely located misfit dislocations of the same sign. The use of a hydrogen atmosphere for annealing the GeSi film yields a lower rate of generation of misfit dislocations than annealing in vacuum or argon.
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