Dominant Factors in TDDB Degradation of Cu Interconnects

Abstract

The field acceleration factor (/spl gamma/) for the E-model of time-dependent dielectric breakdown (TDDB) in various Cu interconnect structures has been studied. The /spl gamma/ for pSiCN structures is larger than that of pSiN structures and independent of the kind of interlayer dielectric material or other processes used to make it. The relationship between the breakdown electric field strength (E/sub BD/) and the TDDB lifetime has been investigated. It has been demonstrated that the TDDB lifetime can be predicted from experimentally measured E/sub BD/ and /spl gamma/. An E/sub BD/ of at least 4.2 MV/cm is necessary to assure ten-year reliability under 0.2 MV/cm operation. Moreover, the important factors influencing the TDDB lifetime for Cu interconnects have been discussed. These include the Cu chemical-mechanical polishing (CMP), the post-CMP annealing, line edge roughness, and fine line effect.