Abstract
We describe a Deep Level Transient Spectroscopy (DLTS) study of the major donor trap in n-type epitaxial GaAs grown by the Close-Spaced Vapor Transport (CSVT) technique. Its characteristics are: Δ E a = 0.78 eV, σ na = 1 × 10 −12cm 2. We think it might be identified with the L12 trap. The origin of the trap is discussed.
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