Abstract
Abstract High quality CuIn0.8Ga0.2S2(CIGS) absorber material for thin film solar cells applications was deposited on soda lime glass substrate through the close spaced vapor transport (CSVT) technique. Deposition conditions were chosen to obtain high quality films. CIGS thin layer was investigated by scanning electron microscope (SEM), X-Ray diffraction (XRD), Vis-NIR spectroscopy and Hall Effect measurements. The temperature dependent Hall Effect measurements in the range 80–400 K have been performed. Activation energies were estimated from the Arrhenius plot of the conductivity versus 1/T and were42 meV and 15 meV at high and low temperature regimes, which coincide with the activation energies of the Cu vacancy (VCu) and the Ga vacancy (VGa), respectively. The mobility's temperature dependence of the charge was discussed and the predominant scattering mechanisms were assigned to the ionized impurity and non-polar optical phonon scattering at low and high temperature regimes, respectively.
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