Abstract
It is observed in the boron-doped crystals irradiated with 5.5MeV electrons that the H3-center with a donor level at Ev+0.535eV is formed by addition of one hydrogen atom to a radiation defect—the H3 precursor. Although the H3 precursor still escapes detection with electrical methods, its introduction rate θ can be determined via the maximum concentration of the H3-centers. θ linearly increases with boron concentration in low-doped samples indicating one boron atom in the complex, and saturates at θ≃0.1cm−1 for [B]=(3−20)×1015cm−3. Analysis of the interstitial/vacancy balance reveals the interstitial nature of the defect. The identification of the H3 precursor as the BiCs pair and the H3-center as a BCH complex is in a good agreement with the available experimental data.
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