Abstract
The influence of platinum contamination on the stability of radiation defects produced by high-energy proton irradiation was investigated in the low-doped n-type float-zone oxygen rich silicon forming the base of power p+nn+ diodes. Platinum was first implanted and then in-diffused at different temperatures to obtain different levels of contamination. Diodes were then implanted with 1.8 MeV protons to a fluence of 2x1010 cm-2 and radiation defect reaction during isochronal annealing were investigated by deep-level transient spectroscopy. Results show that contamination of silicon by platinum atoms influences significantly both the introduction rates and the temperature stability of dominant radiation defects (vacancy-oxygen pairs, divacancies and VOH complexes).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
