Abstract
A class of spin logic devices based on the spin-orbit induced spin-transfer torques requires magnetic coupling between electrically isolated ferromagnetic elements. Here we use micromagnetic modeling to study the magnetic coupling induced by fringe fields from chiral domain walls in perpendicularly magnetized nanowires. These domains can be displaced using spin-orbit torques from a proximal heavy metal layer. For a 16 nm width wire that is 1 nm thick, we find that spin-orbit torques induced domain wall propagation can reliably switch a proximal 16 nm diameter 1 nm thick nanomagnet. These results show a promising means of implementing spin logic with spin-orbit torques using elements with perpendicular magnetization, which does not require an applied magnetic field.
Highlights
Applications of spintronics using spin transport and spin transfer torques are being actively investigated for next-generation memory and logic devices beyond CMOS.[1]
A type of charge based spin-logic device proposed by Datta et al uses interconnecting spin switches that consist of an input nanomagnet, as a component of a write unit and an output nanomagnet, which is a part of a read unit.[8]
We show that domain walls (DWs) fringe fields provide strong magnetic coupling between perpendicularly magnetized elements which are only 1 nm thick
Summary
Applications of spintronics using spin transport and spin transfer torques are being actively investigated for next-generation memory and logic devices beyond CMOS.[1]. A basic logic operation uses an input current to set the magnetization state of the write unit using spin-orbit torques (i.e. using charge current flow in a material with a large spin Hall ratio). Highly scaled logic devices require the use of perpendicularly magnetized elements.[1] Second, switching of perpendicularly magnetized nanoelements with spin-orbit torques (SOT) requires a symmetry breaking interaction, typically an in-plane applied field is used.[9] switching perpendicularly magnetized nanoelements with SOT can require large current densities[10] and the current density must be reduced to decrease the energy consumption per operation. We present a micromagnetic modeling study demonstrating that SOT driven chiral domain walls (DWs) can efficiently couple electrically isolated perpendicularly magnetized input and output units for spin logic devices. The DW chirality is both critical to having deterministic current driven DW motion and strong coupling between the write and read nanomagnets
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