Abstract
Simultaneous observation of both dislocation etch pits and ferroelectric domain walls was made on b-face of ferroelectric glycine sulfate crystals by etching technique with water. Negative end of the domain is pebbled while positive end is smooth. The dislocation etch pits are well discernible from the “pebbles” on the etched face. It was revealed that under applications of a d.c. electric field of about 30 v/cm a domain wall is caught in dislocations during the domain wall motion resulting in zig-zag shape. Evidences were obtained that also in as-grown crystals domain walls were caught in dislocations. It is assumed that dislocations in which a domain wall is caught are edge dislocations emerging out of b-face.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call