Abstract
The motion of domain walls of horizontal chevron interfaces was investigated with respect to externally applied conditions. As in solid state ferroelectrics, a linear displacement of domain walls is observed with time, thus leading to a constant domain wall velocity. Variation of the electric field time asymmetry ratio, which is the driving force of the domain wall motion, leads to a linear increase in domain wall velocity, just as does an increase of the electric field amplitude. The frequency dependence of the domain wall velocity is strongly influenced by motion of ionic impurities and ceasing of saturated director switching, while the temperature dependence is mainly governed by viscosity effects of an Arrhenius-like behaviour.
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