Abstract
AbstractThis letter presents the architecture and characterization of a Doherty power amplifier (DPA) with a simplified out‐of‐phase power splitter (SOPPS) for fifth‐generation (5G) small‐cell applications. The proposed SOPPS consists of two passive components, which is conducive to chip miniaturization. Additionally, a stable DPA architecture is employed to avoid oscillation caused by out‐of‐phase ports imbalance. A DPA based on gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) technology is fabricated, achieving high gain of 32 dB over 2.5 to 2.7 GHz. Using a continuous‐wave signal, the DPA exhibits a saturation output power of 36 dBm, with a peak power‐added efficiency (PAE) of 42.3% and 37% at saturation and 6‐dB power‐back‐off, respectively, across the operating band.
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