Abstract
In this paper we report on the design and measurements of 1.75× 2.45mm2 monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) fabricated using low-voltage, low-cost GaAs hetero-junction bipolar transistor (HBT) technology. In measurements, from 31dBm to 40dBm saturated output power higher than 43% drain efficiency is obtained across 728 to 768 MHz band. Moreover, single stage Doherty amplifier exhibits 14dB small signal gain over the band of operation. To the best of our knowledge, with low voltage GaAs HBT, the highest efficiency and saturated output power are reported in this work.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
