Abstract
Sidewall quantum wells in the vicinity of hexagonal V-shaped pits with a reduced thickness and a higher band gap than the regular c-plane quantum wells were suggested as the origin of high luminescence efficiency in GaInN-based light-emitting diodes. In this Brief Note, by transmission electron microscopy combined with energy dispersive x-ray analysis, it was found that there must be no sidewall quantum wells around the V-shaped pits, which are just interference fringes arising from lattice strain.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call