Abstract
Sidewall quantum wells in the vicinity of hexagonal V-shaped pits with a reduced thickness and a higher band gap than the regular c-plane quantum wells were suggested as the origin of high luminescence efficiency in GaInN-based light-emitting diodes. In this Brief Note, by transmission electron microscopy combined with energy dispersive x-ray analysis, it was found that there must be no sidewall quantum wells around the V-shaped pits, which are just interference fringes arising from lattice strain.
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