Abstract
Formation of ordered defect compounds and anomalous grain boundary physics are unique to Cu chalcogenides CuInX2 (S/Se) and its alloys. X-ray photoelectron spectroscopy (XPS) studies were carried on Cu2-xZn1.3SnS4 (x=0.0, 0.3, 0.5 and 0.7) to determine the position of valence band edge and explore the formation of ordered vacancy compounds along with absorption studies. Conductive atomic force microscopy (C-AFM) studies were carried out Cu2ZnSnS4 (CZTS) film deposited on Si and sodalime glass substrates to understand grain boundary physics.
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