Abstract
DLTS measurements were carried out on Schottky barriers formed on the surfaces of n-CdTe:In crystals heated in argon gas. Four electron trap levels were detected. The carrier concentration near the surface decreased to less than a tenth as a result of heat treatments at 350 or 400°C for 1 hour. A sample heated at 400°C showed a steep decrease in the carrier concentration near the surface. The concentration of an electron trap level (EC-ET=0.34 eV) was reduced by heat treatments. Heat treatments at temperatures higher than 350°C for 1 hour seemed to induce some defects related to cadmium vacancies or tellurium interstitials, which compensate donors and reduce the concentration of the trap level near the surfaces of CdTe.
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