Abstract
The results of a DLTS study of GaAs MIS structures with plasma deposited Si3N4 as insulator are given. It is established that the activation energy and the capture cross section of traps decrease with reverse bias and at large biases correspond to the respective parameters of bulk traps. A correlation is found between the DLTS spectra and the maximum HF capacitance of the MIS structure in the “accumulation” region. Experimental data are explained in the framework of a “unified defect model” by the change of the potential relief in a semiconductor as a result of a high-resistivity layer formed near the interface. The interpretation of the DLTS spectra of the GaAs MIS structures is discussed. [Russian Text Ignored].
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